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发明名称
Method for integrating a high-k gate dielectric in a transistor fabrication pr ocess
摘要
申请公布号
GB2423636(A)
申请公布日期
2006.08.30
申请号
GB20060009291
申请日期
2004.10.08
申请人
ADVANCED MICRO DEVICES, INC
发明人
CATHERINE B LABELLE;BOON-YONG ANG;JOONG S JEON;ALLISON KAY HOLBROOK;QI XIANG;HUICAI ZHONG
分类号
H01L21/28;H01L29/51
主分类号
H01L21/28
代理机构
代理人
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地址
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