发明名称 |
Method for sonos eflash integrated circuit |
摘要 |
A method of manufacturing a charge storage layer for a SONOS memory device. A feature of the embodiment is the first gate layer is formed over the charge storing layer (ONO) before the charge storing layer is patterned. The first gate layer protects the charge storing layer (ONO) from various etches used in the process to pattern the various gate dielectric layers on other regions of substrate.
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申请公布号 |
SG124342(A1) |
申请公布日期 |
2006.08.30 |
申请号 |
SG20050008192 |
申请日期 |
2005.12.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
SHESHAGIRI NAGARAD SRIPAD;KYUN SOHN DONG;LIM YOKE LENG LOUIS;LEE CHWA SIOW;FANG LIM HSIANG |
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