发明名称 |
Method for forming cmos device with self-aligned contacts and region formed using salicide process |
摘要 |
A method for forming CMOS devices on a semiconductor substrate is disclosed in which gate structures are formed within both the core region and the non-core region of the semiconductor substrate. The gate structures include a gate dielectric layer and a gate film stack that includes a conductive layer and an overlying hard mask. The hard mask is then removed from the gate structures in the non-core region. A salicide process is then performed so as to form a silicide layer in the non-core region. A barrier layer is formed that extends over the core region and a pre-metal dielectric film is formed that extends over the barrier layer. A selective etch process is performed so as to form self-aligned contact openings that extend through the pre-metal dielectric film and through the barrier layer in the core region. These openings are then filled with conductive material to form self-aligned contacts in the core region. This produces a CMOS device in the core region that has high device density and includes high-speed CMOS devices the non-core region.
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申请公布号 |
US7098114(B1) |
申请公布日期 |
2006.08.29 |
申请号 |
US20040874980 |
申请日期 |
2004.06.22 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
SYAU TSENGYOU;LEE SHIH-KED;LIEN CHUEN-DER |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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