发明名称 Monolithic white light emitting device
摘要 A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.
申请公布号 US7098482(B2) 申请公布日期 2006.08.29
申请号 US20050071223 申请日期 2005.03.04
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 CHO JAE-HEE;YOON SUK-HO;LEE JEONG-WOOK
分类号 H01L27/15;H01L29/18;H01L29/22;H01L29/26;H01L31/12;H01L33/06;H01L33/32;H01L33/50 主分类号 H01L27/15
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