发明名称 |
Monolithic white light emitting device |
摘要 |
A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.
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申请公布号 |
US7098482(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20050071223 |
申请日期 |
2005.03.04 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHO JAE-HEE;YOON SUK-HO;LEE JEONG-WOOK |
分类号 |
H01L27/15;H01L29/18;H01L29/22;H01L29/26;H01L31/12;H01L33/06;H01L33/32;H01L33/50 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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