发明名称 |
Semiconductor device including bit line formed using damascene technique and method of fabricating the same |
摘要 |
A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spacers on the inner walls of the groove. An opening is formed by etching the insulating layer disposed under the groove using the spacers as an etch mask. A conductive layer is formed to fill the opening. A capping layer is formed to fill the groove.
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申请公布号 |
US7098135(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20030703328 |
申请日期 |
2003.11.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG SEUNG-PIL;KANG CHANG-JIN;JEON JEONG-SIC;CHI KYEONG-KOO;SON SEUNG-YOUNG;KIM SANG-YONG |
分类号 |
H01L21/28;H01L21/311;H01L21/768;H01L21/8242 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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