Methods for forming atomic layers and thin films including tantalum nitride and devices including the same

摘要

Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR₁)(NR₂R₃)₃, wherein R₁, R₂ and R₃ are each independently H or a C₁-C₆ alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.