发明名称 |
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects |
摘要 |
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited. |
申请公布号 |
US7097718(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20030441413 |
申请日期 |
2003.05.20 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
MULE'STAGNO LUCIANO;FEI LU;HOLZER JOSEPH C.;KORB HAROLD W.;FALSTER ROBERT J. |
分类号 |
C30B15/20;C30B29/06;C30B15/00;H01L21/208;H01L21/322 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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