发明名称 Method of forming dual damascene structure
摘要 A method for forming dual damascene features in a dielectric layer. Vias are partially etched in the dielectric layer. A trench pattern mask is formed over the dielectric layer. Trenches are partially etched in the dielectric layer. The trench pattern mask is stripped. The dielectric layer is further etched to complete etch the vias and the trenches in the dielectric layer.
申请公布号 US7098130(B1) 申请公布日期 2006.08.29
申请号 US20040016304 申请日期 2004.12.16
申请人 LAM RESEARCH CORPORATION 发明人 KIM JI SOO;LEE SANGHEON;SADJADI S. M. REZA
分类号 H01L21/4763 主分类号 H01L21/4763
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