发明名称 THIN FILM TRANSISTORS WITH SELF-ALIGNED TRANSPARENT PIXEL ELECTRODE
摘要 A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole dow n to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
申请公布号 CA2358579(C) 申请公布日期 2006.08.29
申请号 CA20012358579 申请日期 2001.10.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 TSUJIMURA, TAKATOSHI;SCHLEUPEN, KAI R.;COLGAN, EVAN G.
分类号 G02F1/1362;H01L29/786;G02F1/1368;H01L33/00;H01L49/02;H05B33/12 主分类号 G02F1/1362
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