发明名称 |
THIN FILM TRANSISTORS WITH SELF-ALIGNED TRANSPARENT PIXEL ELECTRODE |
摘要 |
A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole dow n to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
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申请公布号 |
CA2358579(C) |
申请公布日期 |
2006.08.29 |
申请号 |
CA20012358579 |
申请日期 |
2001.10.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TSUJIMURA, TAKATOSHI;SCHLEUPEN, KAI R.;COLGAN, EVAN G. |
分类号 |
G02F1/1362;H01L29/786;G02F1/1368;H01L33/00;H01L49/02;H05B33/12 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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