发明名称 |
Method for providing a redistribution metal layer in an integrated circuit |
摘要 |
An integrated circuit includes a portion having at least one active circuit area. The integrated circuit also includes a redistribution metal layer fabricated at least partially during fabrication of the portion of the integrated circuit. A method for fabricating an integrated circuit includes fabricating a portion of the integrated circuit, where the portion includes at least one active circuit area. The method also includes fabricating a redistribution metal layer at least partially during fabrication of the portion of the integrated circuit. |
申请公布号 |
US7096581(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20020091743 |
申请日期 |
2002.03.06 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
THOMAS DANIELLE A.;SIEGEL HARRY MICHAEL;VIEIRA ANTONIO A. DO BENTO;CHIU ANTHONY M. |
分类号 |
H01L23/52;H05K3/30;H01L21/3205;H01L21/60;H01L23/12;H01L23/31;H01L23/485 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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