发明名称 Method for providing a redistribution metal layer in an integrated circuit
摘要 An integrated circuit includes a portion having at least one active circuit area. The integrated circuit also includes a redistribution metal layer fabricated at least partially during fabrication of the portion of the integrated circuit. A method for fabricating an integrated circuit includes fabricating a portion of the integrated circuit, where the portion includes at least one active circuit area. The method also includes fabricating a redistribution metal layer at least partially during fabrication of the portion of the integrated circuit.
申请公布号 US7096581(B2) 申请公布日期 2006.08.29
申请号 US20020091743 申请日期 2002.03.06
申请人 STMICROELECTRONICS, INC. 发明人 THOMAS DANIELLE A.;SIEGEL HARRY MICHAEL;VIEIRA ANTONIO A. DO BENTO;CHIU ANTHONY M.
分类号 H01L23/52;H05K3/30;H01L21/3205;H01L21/60;H01L23/12;H01L23/31;H01L23/485 主分类号 H01L23/52
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