| 发明名称 |
High voltage device with ESD protection |
| 摘要 |
A high voltage device. A high voltage MOS transistor is applied in the ESD protection device to the structure of which a doped region is added, generating a parasitic semiconductor controlled rectifier (SCR) having a shorter discharge path such that the SCR has faster response enhancing ESD protection.
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| 申请公布号 |
US7098522(B2) |
申请公布日期 |
2006.08.29 |
| 申请号 |
US20040956063 |
申请日期 |
2004.10.04 |
| 申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LIN GEENG-LIH;JOU YEH-NING;KER MING-DOU |
| 分类号 |
H01L29/00;H01L27/02;H01L29/74;H01L31/062 |
主分类号 |
H01L29/00 |
| 代理机构 |
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