| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a bipolar transistor, including an electrode of a first layer and a flat electrode of a second layer, in which assembling flexibility is high because the deposition area of wire bonding is less limited, and displacement in the alignment of mask and isolation distance for obtaining the desired resist pattern can be determined, only by considering the base electrode 6 and emitter electrode of the second layer are provided adjacent only at the one side of the rectangular shape, that reduction in emitter resistance and reduction in thickness of chip cannot be accelerated in according to the arrangement of external terminals. SOLUTION: The base electrodes of the first layer are formed as ladder patterns, and the emitter electrode of the first layer is allocated in parallel between the patterns. Moreover, the electrode layer of the second layer is formed as the flat layer, and the parallel emitter electrode and base electrode of the first layer are allocated in parallel to a side adjacent to the electrode of the second layer. Accordingly, the emitter resistance can be reduced, even if the wire bond is deposited to the second electrode adjacent to the end portion, where the base electrode of the first layer is bundled in the form of a ladder, resulting in making contribution to reduction in the thickness of chip. COPYRIGHT: (C)2006,JPO&NCIPI |
