发明名称 GUNN DIODE PARAMETER MEASUREMENT DEVICE
摘要 FIELD: testing semiconductor devices. ^ SUBSTANCE: proposed device that can be used for investigating and developing Gunn diodes has regulating components, as well as input and output terminals. Output terminals are connected in parallel with instrument resistor. Switch-mode power supply is connected to primary winding of transformer whose secondary winding is connected to input of low-pass filter. Output of the latter is connected to series circuit set up of Gunn diode and instrument resistor. ^ EFFECT: ability of precluding interaction between diode under test and measuring circuit. ^ 1 cl, 2 dwg
申请公布号 RU1840284(C) 申请公布日期 2006.08.27
申请号 SU19691505251 申请日期 1969.04.22
申请人 发明人 BORISOV VLADIMIR ANATOL'EVICH
分类号 G01R31/26 主分类号 G01R31/26
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