SEMICONDUCTOR DEVICE HAVING FINFET AND METHOD OF FORMING THE SAME
摘要
In one embodiment, a semiconductor device includes a plurality of fin-shaped active regions defined by a trench formed in a substrate with a predetermined depth; an isolation layer formed inside the trench and comprising a first insulating material; and a plurality of word lines formed on the isolation layer inside the trench and covering a sidewall of the active region inside the trench. A separation layer is formed between two neighboring word lines to separate the two neighboring word lines of the plurality of word lines inside the trench with a predetermined distance. The separation layer comprises a second insulating material having an etch selectivity with respect to the first insulating material.
申请公布号
KR100618904(B1)
申请公布日期
2006.08.25
申请号
KR20050058552
申请日期
2005.06.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JU YONG;CHUNG, TAE YOUNG;LEE, KYU HYUN;KIM, YONG SUNG