发明名称 |
SEMICONDUCTOR NANOWIRE OF HETEROSTRUCTURE AND METHOD FOR PRODUCING THE SAME |
摘要 |
Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires. |
申请公布号 |
KR20060093642(A) |
申请公布日期 |
2006.08.25 |
申请号 |
KR20050114068 |
申请日期 |
2005.11.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, EUN JOO;JUN, SHIN AE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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