发明名称 SEMICONDUCTOR NANOWIRE OF HETEROSTRUCTURE AND METHOD FOR PRODUCING THE SAME
摘要 Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires.
申请公布号 KR20060093642(A) 申请公布日期 2006.08.25
申请号 KR20050114068 申请日期 2005.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, EUN JOO;JUN, SHIN AE
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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