发明名称 |
HIGH PERFORMANCE STRAINED CMOS DEVICES |
摘要 |
A semiconductor device and method of manufacture provide an n-channel field effect transistor (nFET) having a shallow trench isolation with overhangs that overhang Si-SiO2 interfaces in a direction parallel to the direction of current flow and in a direction transverse to current flow. The device and method also provide a p-channel field effect transistor (pFET) having a shallow trench isolation with an overhang that overhangs Si-SiO2 interfaces in a direction transverse to current flow. However, the shallow trench isolation for the pFET is devoid of overhangs, in the direction parallel to the direction of current flow.
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申请公布号 |
KR20060093712(A) |
申请公布日期 |
2006.08.25 |
申请号 |
KR20067007450 |
申请日期 |
2006.04.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;GLUSCHENKOV OLEG G. |
分类号 |
H01L21/76;H01L;H01L21/336;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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