| 摘要 |
A plasma process apparatus for performing a plasma process on a target substrate 4 includes a process chamber 5 in which the target substrate 4 is installed, a gas inlet 6 for introducing a gas into the process chamber 5 , and a plasma discharge production section 15 provided in the process chamber 5 . The plasma discharge production section 15 includes a first electrode 2 a and a second electrode 2 b that is closer to the target substrate 4 than the first electrode 2 a is. Only surfaces of the first electrode 2 a and the second electrode 2 b which can be seen in the normal line direction of the target substrate 4 function as plasma discharge surfaces. Thus, a high quality film is realized even at a low target substrate temperature, and the film formation is performed with high gas dissociation efficiency. |
