PROCEDE ET DISPOSITIF POUR CORRIGER LE DECALAGE INDUIT PAR DES EFFETS PHOTOCONDUCTEURS DE TRANSISTORS A EFFET DE CHAMP DANS UN DETECTEUR DE RAYONS X A SEMI CONDUCTEUR

摘要

A method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in solid state x-ray detectors includes dedicating rows at the beginning and end of an x-ray detector scan. The dedicated rows may be used to measure the "signal" induced by the photo-conductivity of FET switches in solid state x-ray detectors. Since the signal induced by FET photo-conductivity decays over time, the measurements taken at the beginning and end of a detector scan may be used to predict by interpolation the amount of signal contributed by photo-conductive induced offset for each row of the detector scan on a column by column basis.