| 摘要 |
A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region below the substrate, a base contact region of the vertical type bipolar transistor, a buried layer connected to the vertical type bipolar transistor, a buried contact layer which electrically conducts the drain region and the buried layer and a drift region formed between the drain region and the channel region, which has the same conductive type as that of the drain region and has impurity concentration less than that of the drain region.
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