发明名称 |
MAGNESIUM OXIDE SINGLE CRYSTAL VAPOR DEPOSITION MATERIAL AND PROCESS FOR PRODUCING THE SAME |
摘要 |
<p>This invention provides a single crystal MgO vapor deposition material for use as a target material for the formation of an MgO film on a substrate by vacuum vapor deposition including electron beam vapor deposition. The deposition material can prevent the occurrence of splash without lowering the film formation rate at the time of vapor deposition and, at the same time, can improve excellent film properties, for example, can improve discharge properties when used as a protective film for PDP. The vapor deposition material is formed of a single crystal of magnesium oxide and satisfies the requirements that D/t is not less than 4, t is not less than 0.4 × 10<SUP>-3</SUP> m, and V is not less than 5 × 10<SUP>-9</SUP> m<SUP>3</SUP> wherein D represents the equivalent circle diameter of a maximum projected area of the vapor deposition material, m; t represents the thickness in a direction perpendicular to the maximum projected area, m; and V represents the volume of the vapor deposition material, m<SUP>3</SUP>. Not less than 90% of the total area of the maximum projected area is constituted by at least one of (100), (110) and (111) planes.</p> |
申请公布号 |
WO2006088190(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
WO2006JP302991 |
申请日期 |
2006.02.21 |
申请人 |
TATEHO CHEMICAL INDUSTRIES CO., LTD.;TOUTSUKA, ATSUO;KAWAGUCHI, YOSHIFUMI;KUNISHIGE, MASAAKI |
发明人 |
TOUTSUKA, ATSUO;KAWAGUCHI, YOSHIFUMI;KUNISHIGE, MASAAKI |
分类号 |
C23C14/24 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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