| 摘要 |
PROBLEM TO BE SOLVED: To provide a crucible and a method for producing a polycrystal semiconductor capable of producing a polycrystal semiconductor which is almost a single crystal and has a uniform crystal orientation. SOLUTION: The method for producing a polycrystal semiconductor comprises charging a semiconductor material 7 in a crucible 6 in which a seed crystal 8 of the semiconductor is disposed on the bottom surface, heat-melting the semiconductor material 7 in the crucible 6 using a heating means, starting cooling from the bottom of the crucible 6, and solidifying a molten material by gradually cooling the whole crucible, wherein Si is used as the semiconductor material 7 and 3C-SiC is used as the seed crystal 8. COPYRIGHT: (C)2006,JPO&NCIPI
|
