A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.
申请公布号
WO2006088713(A2)
申请公布日期
2006.08.24
申请号
WO2006US04504
申请日期
2006.02.08
申请人
LAM RESEARCH CORPORATION;YUN, SEOKMIN;BOYD, JOHN, M.;WILCOXSON, MARK;DE LARIOS, JOHN
发明人
YUN, SEOKMIN;BOYD, JOHN, M.;WILCOXSON, MARK;DE LARIOS, JOHN