Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same

摘要

A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer to a second thickness less than the first thickness and crystallizing the etched semiconductor layer in a second direction.