发明名称 High temperature chemical vapor deposition apparatus
摘要 Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 10 torr are provided. The apparatus is provided with means for defining a volume space in the reaction chamber for pre-reacting the reactant feeds forming at least a reaction precursor in a gaseous form, and a volume space for depositing a coating layer of uniform thickness on the substrate from the reacted precursor. In one embodiment, the means for defining the two different zones comprises a distribution medium separating the pre-reaction zone from the deposition zone, for uniform distribution of the reacted precursor on the substrate. In another embodiment, the means for defining the two different zones comprises a plurality of reactant feed jets or injectors, for creating a jet-interaction zone or pre-reactant zone separate from a deposition zone, for deposing the reacted precursor on the substrate.
申请公布号 US2006185590(A1) 申请公布日期 2006.08.24
申请号 US20050291558 申请日期 2005.12.01
申请人 GENERAL ELECTRIC COMPANY 发明人 SCHAEPKENS MARC;SARIGIANNIS DEMETRIUS;MURALIDHARAN LAKSHMIPATHY
分类号 C23C16/00 主分类号 C23C16/00
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