发明名称 |
Insulated gate power semiconductor devices |
摘要 |
A trench-gate semiconductor device ( 100 ) has a trench network (STR 1 ), ITR 1 ) surrounding a plurality of closed transistor cells (TCS). The trench network comprises segment trench regions (STR 1 ) adjacent sides of the transistor cells (TCS) and intersection trench regions (ITR 1 ) adjacent corners of the transistor cells. As shown in FIG. 16 which is a section view along the line II-II of FIG. 11, the intersection trench regions (ITR 1 ) each include insulating material ( 21 D) which extends from the bottom of the intersection trench region with a thickness which is greater than the thickness of the insulating material ( 21 B 1 ) at the bottom of the segment trench regions (STR 1 ). The greater thickness of the insulating material ( 21 D) extending from the bottom of the intersection trench regions (ITR 1 ) is effective to increase the drain-source reverse breakdown voltage of the device ( 100 ). The insulating material ( 21 D) which extends from the bottom of each intersection trench region (ITR 1 ) may extend upwards to thicken the insulating material at the corners of the cells (TCS) over at least part of the vertical extent of the channel-accommodating body region ( 23 ) so as to increase the threshold voltage of the device.
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申请公布号 |
US2006189063(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20040564214 |
申请日期 |
2004.07.07 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HUETING RAYMOND J.;HIJZEN ERWIN A.;IN'T ZANDT MICHAEL A. |
分类号 |
H01L21/8238;H01L21/336;H01L29/423;H01L29/76;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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