发明名称 |
3-Dimensional flash memory device and method of fabricating the same |
摘要 |
In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on both sides of the channel region in the silicon layer. Integration can be improved by storing data in a 3-dimensional manner; a 2-bit operation can be performed by providing transistors on both sides of the gate.
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申请公布号 |
US2006186446(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20060349287 |
申请日期 |
2006.02.06 |
申请人 |
KIM SUNG-MIN;YUN EUN-JUNG;KIM DONG-WON;YOON JAE-MAN |
发明人 |
KIM SUNG-MIN;YUN EUN-JUNG;KIM DONG-WON;YOON JAE-MAN |
分类号 |
H01L29/94;H01L27/108;H01L29/76;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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