| 摘要 |
<p>An Atomic Layer CVD process and apparatus deposits single and or multiple minelayers of material sequentially at atmospheric pressure. Sequential monolayer depositions are separated in time and in space by combinations of physical barriers and/or gas curtains and/or by physical movement of substrates from one deposition chamber or location to another Pulse and/or continuous flows of reactant and purge gases are used in alternate embodiments of the present invention. Reactant injection, purge gas flow and exhaust flows at separated deposition chambers or locations are controlled by coordination of dedicated gas manifolds and control systems for each spatially or temporally separated deposition process or location.</p> |
