| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for sealing a semiconductor chip with resin without covering the external terminal of a semiconductor device having a power transistor. <P>SOLUTION: In a semiconductor chip 3 having the power transistor, a drain electrode DE on the first surface of the semiconductor chip 3 is joined to the bottom surface of a recess 2a via a connection material 5a for storing into the recess 2a of a metal cap 2. A gate electrode GE and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip 3, and metal plate terminals 6G, 6S are joined to the gate electrode GE and the source electrode SE via connection materials 5b, 5c. The semiconductor chip 3 is sealed with a resin seal 4 while the packaging surfaces of the metal plate terminals 6G, 6S are exposed. The metal plate terminals 6G, 6S and the packaging surface of a third portion 2d of the metal cap 2 are joined to an electrode 10E of a packaging substrate 10 via connection members 5e, 5f, 5g. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
