| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a through-electrode by which an yield can be improved and a formation step is simplified. SOLUTION: The method is used to form a through-electrode penetrating in the direction the thickness of a semiconductor substrate. The method includes: a first step wherein a first insulating film 2a is formed on the front surface of a semiconductor substrate 1, a second insulating film 2b is formed on the rear surface of the semiconductor substrate 1, and a first etching stop layer 3 made of a conductive member such as a metallic layer or the like having an etching rate different from that of the semiconductor substrate 1 is formed on the second insulating film 2b; a second step wherein the formation objective portion of the through-electrode 7 is etched up to the first etching stop layer 3 to form a recessed part 4; and a third step wherein the first etching stop layer 3 is used as a seed layer, and the recessed part 4 is plated by using bottom-up growth so as to form the through-electrode 7. COPYRIGHT: (C)2006,JPO&NCIPI
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