| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing an organic film through plasma etching where damages to a base film are small. SOLUTION: The method of processing the organic film includes a step of locating a substrate 12, in which the organic film is formed in a vessel 11 configured so that the interior can be pressure reduced, a step of introducing a gas containing a heavy hydrogen compound or a tritium compound into the vessel 11 and ionizing the introduced gas and generating a plasma, and a step of etching processing the organic film on the substrate 12 by the generated plasma. COPYRIGHT: (C)2006,JPO&NCIPI
|
