| 发明名称 |
Etchant and method of etching |
| 摘要 |
A fine wiring line profile with satisfactory precision is formed from a multilayer film containing a first layer made of an aluminum alloy and a second layer formed thereon made of a molybdenum-niobium alloy, by simultaneously etching the two layers constituting the multilayer film through only one etching operation while preventing the upper layer from forming overhangs. An etchant for etching a multilayer film containing an aluminum alloy layer formed over a substrate and a molybdenum-niobium alloy layer formed thereon having a niobium content of 2-19% by weight contains an aqueous solution of an acid mixture containing phosphoric acid, nitric acid, and an organic acid; and a method of etching is carried out with this etchant. The etchant preferably has a phosphoric acid concentration N<SUB>p </SUB>of 50-75% by weight, a nitric acid concentration N<SUB>n </SUB>of 2-15% by weight, and an acid ingredient concentration defined by N<SUB>p</SUB>+(98/63)N<SUB>n </SUB>of 55-85% by weight.
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| 申请公布号 |
US2006189123(A1) |
申请公布日期 |
2006.08.24 |
| 申请号 |
US20050289382 |
申请日期 |
2005.11.30 |
| 申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
SAITOU NORIYUKI;YOSHIDA TAKUJI;INOUE KAZUNORI;ISHIKAWA MAKOTO;KAMIHARAGUCHI YOSHIO |
| 分类号 |
C23F1/20;H01L21/4763;C23F1/26;C23F1/44;H01L21/28;H01L21/302;H01L21/306;H01L21/3205;H01L21/3213;H01L21/768;H01L23/52 |
主分类号 |
C23F1/20 |
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