Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed

摘要

An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF₃ or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.