发明名称 |
Capacitor of semiconductor device and method of fabricating the same |
摘要 |
Provided is a capacitor of a semiconductor device and a method of fabricating the same. In one embodiment, the capacitor includes a lower electrode formed on a semiconductor substrate; a dielectric layer formed on the lower electrode; and an upper electrode that is formed on the dielectric layer. The upper electrode includes a first conductive layer, a second conductive layer, and a third conductive layer stacked sequentially. The first conductive layer comprises a metal layer, a conductive metal oxide layer, a conductive metal nitride layer, or a conductive metal oxynitride layer. The second conductive layer comprises a doped polysilicon germanium layer. The third conductive layer comprises a material having a lower resistance than that of the second conductive layer.
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申请公布号 |
US2006186452(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20050316487 |
申请日期 |
2005.12.21 |
申请人 |
NAM GAB-JIN;KIM YOUNG-SUN;YOO CHA-YOUNG;LEE JONG-CHEOL;NOH JIN-TAE;AHN JAE-YOUNG;PARK YOUNG-GEUN;CHOI JAE-HYOUNG;YEO JAE-HYUN |
发明人 |
NAM GAB-JIN;KIM YOUNG-SUN;YOO CHA-YOUNG;LEE JONG-CHEOL;NOH JIN-TAE;AHN JAE-YOUNG;PARK YOUNG-GEUN;CHOI JAE-HYOUNG;YEO JAE-HYUN |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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