| 摘要 |
A plasma ion implantation system includes a process chamber (110), a source for generating a plasma (140) in the process chamber, a platen (114) for holding a substrate (120) in the process chamber, an implant pulse source (130) configured to generate implant pulses for accelerating ions from the plasma into the substrate, and an axial electrostatic confinement structure configured to confine electrons in a direction generally orthogonal to a surface of the platen. The confinement structure may include an auxiliary electrode (122) spaced from the platen and a bias source (128) configured to bias the auxiliary electrode at a negative potential relative to the plasma. |
