| 摘要 |
A semiconductor device and a manufacturing method thereof which enable to secure high yield and increase the capacity of a capacitor are provided. The semiconductor device according to the present invention includes: a plurality of capacitor layers laminated, each capacitor layer including a plurality of storage electrodes, a capacity insulating film covering the surface of the storage electrodes, and a plate electrode provided between the storage electrodes, wherein the plate electrode of each of the laminated capacitor layers are electrically connected to each other and the corresponding storage electrode of each of the laminated capacitor layers are electrically connected to each other.
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