| 摘要 |
A method of fabricating a shallow trench isolation (STI) structure with active edge isolation and increased radiation hardening is presented. The invention comprises forming a pad oxide layer on a substrate. Then a masking layer is formed on the pad oxide and is patterned to define the STI structure trench and spacer locations. A conformal layer of oxide is deposited and is formed into oxide spacers which extend over the active edge of the substrate. The STI structure trench is then etched and a liner oxide is formed on the walls of the trench. The trench is then filled with a dielectric material to form a central oxide region. The central oxide region and oxide spacers are then etched to a desired height and planarized. Finally, the masking layer and portions of the pad oxide layer are then removed.
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