发明名称 Semiconductor device and manufacturing method thereof
摘要 Of three chips ( 2 A), ( 2 B), and ( 2 C) mounted on a main surface of a package substrate ( 1 ) in a multi-chip module (MCM), a chip ( 2 A) with a DRAM formed thereon and a chip ( 2 B) with a flash memory formed thereon are electrically connected to wiring lines ( 5 ) of the package substrate ( 1 ) through Au bumps ( 4 ), and a gap formed between main surfaces (lower surfaces) of the chips ( 2 A), ( 2 B) and a main surface of the package substrate ( 1 ) is filled with an under-fill resin ( 6 ). A chip ( 2 C) with a high-speed microprocessor formed thereon is mounted over the two chips ( 2 A) and ( 2 B) and is electrically connected to bonding pads ( 9 ) of the package substrate ( 1 ) through Au wires ( 8 ).
申请公布号 US2006189031(A1) 申请公布日期 2006.08.24
申请号 US20060399365 申请日期 2006.04.07
申请人 RENESAS TECHNOLOGY CORP. 发明人 KADO YOSHIYUKI;NAITO TAKAHIRO;SATO TOSHIHIKO;IKEGAMI HIKARU;KIKUCHI TAKAFUMI
分类号 H01L21/78;H01L23/31;H01L23/50;H01L23/538;H01L25/065 主分类号 H01L21/78
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