摘要 |
<p>A barrier film for flexible copper substrate characterized in that it consists of a Ni-Cr alloy film composed of 5 to 30 wt.% of Cr, 1 to 10 wt.% of Ti and/or Zr and the balance of unavoidable impurities and Ni, and that the barrier film has a thickness of 3 to 150 nm and a film thickness uniformity, in terms of 1s, of = 10%. Further, there is provided a sputtering target for barrier film formation characterized in that it consists of a Ni-Cr alloy composed of 5 to 30 wt.% of Cr, 1 to 10 wt.% of Ti and/or Zr and the balance of unavoidable impurities and Ni, having a relative magnetic permeability along sputtering surface inward direction of = 100. Thus, there is obtained a barrier film for flexible copper substrate that in the inhibiting of copper diffusion into a resin film of polyimide, etc., can realize satisfactory barrier effects with a film thickness reduced to an extent capable of avoiding any film peeling despite fine wiring pitch, and that even when a temperature rise occurs due to heat treatment, etc., has no change in barrier performance. Further, there is obtained a relevant sputtering target for barrier film formation.</p> |
申请人 |
NIPPON MINING & METALS CO., LTD.;IRUMATA, SHUICHI;YAMAKOSHI, YASUHIRO |
发明人 |
IRUMATA, SHUICHI;YAMAKOSHI, YASUHIRO |