发明名称 |
Method of manufacturing capacitor of semiconductor device |
摘要 |
Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.
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申请公布号 |
US2006189064(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20060329577 |
申请日期 |
2006.01.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM WOO-GWAN;OH JUNG-MIN;HONG CHANG-KI;CHOI SANG-JUN;KIM SANG-YONG |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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