| 发明名称 |
Semiconductor device, and method for manufacturing the same |
| 摘要 |
The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.
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| 申请公布号 |
US2006186559(A1) |
申请公布日期 |
2006.08.24 |
| 申请号 |
US20060399724 |
申请日期 |
2006.04.07 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
OKU YOSHIAKI;NISHIYAMA NORIKAZU;UEYAMA KOREKAZU |
| 分类号 |
H01L23/58;C23C18/12;H01L21/316;H01L21/768 |
主分类号 |
H01L23/58 |
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