| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a capacitor in which a low ESL and a high capacitance are realized. <P>SOLUTION: The capacitor has a stack member formed by stacking a plurality of dielectric layers, on the inside of which are arranged a plurality of internal electrodes arranged in the direction orthogonal to the direction of stacking, and a plurality of feed-through conductors electrically connected to the internal electrodes and penetrating the dielectric layers in the stacking direction, wherein the plurality of feed-through conductors is composed of a plurality of sorts of feed-through conductors different in the height positions of both upper ends and lower ends, while the plurality of sorts of feed-through conductors is provided with electrical inter-sort connections through connecting conductors arranged between contiguous dielectric layers. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
