| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-loss power semiconductor device having a super junction easy in manufacturing and suitable for high volume production. SOLUTION: A method of manufacturing a semiconductor device forms a first conduction-type region and a second conduction-type region in a semiconductor by selectively irradiating an impurity ion into the semiconductor. The regions are alternately disposed with respect to a wafer surface. The first and second conduction-type regions are alternately disposed such that junctions are formed, an area of an irradiation region of the impurity ion is controlled by the electric or magnetic scan of the impurity ion, and the control of accelerating energy of the impurity ion and the area of the irradiation region is performed in a way of decreasing the area of the irradiation region in accordance with an increase in the accelerating energy so that section profiles and the section area of the first and second conduction types are constant along a irradiation direction. COPYRIGHT: (C)2006,JPO&NCIPI
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