| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching system which can accurately detect the end point of dry etching. SOLUTION: In the dry etching system, a substrate to be treated in a reaction chamber 100 is treated by dry etching using plasma made of reactive gas. The reaction gas is generated by supplying radiofrequency power into the reaction chamber 100 where the reaction gas has been introduced. The dry etching system comprises a photoluminescence detector 106 which detects the intensity of photoluminescence from the treated substrate according to the elapsed time since the start of dry etching. COPYRIGHT: (C)2006,JPO&NCIPI
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