发明名称 EQUIPMENT AND METHOD FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide equipment and a method for producing a semiconductor where impurities adhering to the inside of the equipment can be removed easily. SOLUTION: The equipment 1 for producing a semiconductor comprises a vacuum processing chamber 4 or 6, having a mechanism for charging a semiconductor wafer and depositing a film on the semiconductor wafer, a vacuum conveyance chamber 3 for conveying the semiconductor wafer, a means of generating negative ions, and a means of supplying negative ions generated from the ion-generating means to the vacuum processing chamber. In the vacuum processing chamber supplied with negative ions, the negative ions are made to react with particles inside the vacuum processing chamber, and the semiconductor wafer is charged negative by the charging mechanism so that ionized particles do not adhere thereto, thus removing the particles in the vacuum processing chamber. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006222242(A) 申请公布日期 2006.08.24
申请号 JP20050033820 申请日期 2005.02.10
申请人 TOKYO ELECTRON LTD 发明人 SAITO MISAKO;HAYASHI TERUYUKI;KOMIYA TAKAYUKI
分类号 H01L21/304 主分类号 H01L21/304
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