发明名称 |
Transistor having a metal nitride layer pattern, etchant and methods of forming the same |
摘要 |
A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
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申请公布号 |
US2006189148(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20060358082 |
申请日期 |
2006.02.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SANG-YONG;CHA JI-HOON;SHIM WOO-GWAN;HONG CHANG-KI;CHOI SANG-JUN |
分类号 |
H01L21/302;C09K13/00;H01L29/94 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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