| 摘要 |
An integrated circuit semiconductor substrate includes an active silicon layer separated from a silicon substrate layer by a buried insulating material layer. The active silicon layer, however, locally includes at least one over-thickness on the side of the buried layer, while maintaining a flat surface state of the semiconductor layer across the integrated circuit. The over-thickness is created by forming a cavity under the active silicon layer in the local area, and then providing the over-thickness by partially filling the cavity at the bottom of the active silicon layer through epitaxial growth. An insulating layer then fills the remaining portions of the cavity.
|
