发明名称 |
Multiple layer etch stop and etching method |
摘要 |
A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter "slots") in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.
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申请公布号 |
US2006189144(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20050063108 |
申请日期 |
2005.02.22 |
申请人 |
KRAWCZYK JOHN W;MCNEES ANDREW L;MONEY CHRISTOPHER J;PATIL GIRISH S;RHINE DAVID B;VAIDEESWARAN KARTHIK |
发明人 |
KRAWCZYK JOHN W.;MCNEES ANDREW L.;MONEY CHRISTOPHER J.;PATIL GIRISH S.;RHINE DAVID B.;VAIDEESWARAN KARTHIK |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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