| 摘要 |
A vertical batch processing apparatus is configured to transform a semiconductor oxide film on target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film. The apparatus includes a first process gas supply circuit having a first supply port disposed outside a process field to supply a first process gas, and a second process gas supply circuit having a second supply port disposed between the first supply port and the process field to supply a second process gas. A plasma generation field is disposed between the first and second supply ports to activate the first process gas to produce first active species. The first active species react with the second process gas and thereby produce a reactant to react with the semiconductor oxide film to form the intermediate film.
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