| 发明名称 |
METHOD FOR MANUFACTURING GROUP III NITRIDE FILM, SUBSTRATE FOR EPITAXIAL GROWTH, GROUP III NITRIDE FILM, EPITAXIAL SUBSTRATE FOR GROUP III NITRIDE ELEMENT, AND GROUP III NITRIDE ELEMENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a group III nitride film that contains Al with high crystal quality in a specified single crystal substrate. <P>SOLUTION: A needlelike structure composed of AlN with a height of 0.5 nm to 5 nm is formed on a main surface of a specified single crystal substrate. Then, a group III nitride film containing Al is formed via the needlelike structure onto the main surface of the single crystal substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006222449(A) |
申请公布日期 |
2006.08.24 |
| 申请号 |
JP20060112479 |
申请日期 |
2006.04.14 |
| 申请人 |
NGK INSULATORS LTD |
发明人 |
SHIBATA TOMOHIKO;SUMIYA SHIGEAKI;TANAKA MITSUHIRO |
| 分类号 |
H01L21/205;C23C16/02;C23C16/34;H01L33/32 |
主分类号 |
H01L21/205 |
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