发明名称 |
Vertical cavity surface emitting laser diode |
摘要 |
It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor active layer which is formed on the substrate and has a light emitting region; a first reflecting mirror and a second reflecting mirror sandwiching the semiconductor active layer; a first recess which has a first groove depth penetrating at least the semiconductor active layer from the outermost layer of the first reflecting mirror; a second recess having a second groove depth shallower than the first groove depth; a mesa portion which is surrounded by the first and second recesses; and an insulating film which is buried in the first recess.
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申请公布号 |
US2006187997(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20060332043 |
申请日期 |
2006.01.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EZAKI MIZUNORI;KUSHIBE MITSUHIRO;NISHIGAKI MICHIHIKO;TAKAOKA KEIJI |
分类号 |
H01S3/08 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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