发明名称 Vertical cavity surface emitting laser diode
摘要 It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor active layer which is formed on the substrate and has a light emitting region; a first reflecting mirror and a second reflecting mirror sandwiching the semiconductor active layer; a first recess which has a first groove depth penetrating at least the semiconductor active layer from the outermost layer of the first reflecting mirror; a second recess having a second groove depth shallower than the first groove depth; a mesa portion which is surrounded by the first and second recesses; and an insulating film which is buried in the first recess.
申请公布号 US2006187997(A1) 申请公布日期 2006.08.24
申请号 US20060332043 申请日期 2006.01.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EZAKI MIZUNORI;KUSHIBE MITSUHIRO;NISHIGAKI MICHIHIKO;TAKAOKA KEIJI
分类号 H01S3/08 主分类号 H01S3/08
代理机构 代理人
主权项
地址